Shenzhen has made a breakthrough in the field of gallium nitride/silicon carbide integration.

Yesterday, the reporter learned from the Municipal State-owned Assets Supervision and Administration Commission that the National Third Generation Semiconductor Technology Innovation Center Shenzhen Comprehensive Platform, jointly created by the municipal state-owned enterprise Shenzhen Deep Heavy Investment Group and the Municipal Science and Technology Innovation Bureau, has made breakthrough progress in the field of gallium nitride/silicon carbide integration. The center has successfully developed a high-quality aluminum gallium nitride/gallium nitride heterostructure epitaxial layer on a commercial 8-inch 4 inclined 4H-SiC substrate for the first time internationally. This achievement can significantly reduce the defect density of gallium nitride epitaxial materials, greatly improve the heat dissipation performance, and reach the international leading level in all indicators. It is expected to fundamentally solve the reliability issues of gallium nitride. This breakthrough breaks the technical bottleneck of integrating large-sized gallium nitride and silicon carbide materials on a single chip, and can be mass-produced for large-sized, high-quality gallium nitride epitaxial materials, providing a highly competitive alternative solution for the existing silicon-based gallium nitride technology route, laying the foundation for the development and industrialization of gallium nitride/silicon carbide hybrid transistors. (Shenzhen Special Zone Daily)