Domestic semiconductor materials in China achieve breakthroughs again.

Following the successful preparation of 8-inch silicon-based gallium nitride high-electron-mobility materials for the first time globally earlier this year, the team at Jifengshan Laboratory has achieved an important technical breakthrough in the field of indium phosphide materials, with key performance indicators reaching international leading levels. This is the first time in China that domestic collaboration in the production of large-scale indium phosphide materials, from core equipment to key materials, has been achieved. The related achievements can provide important support for the industrial development of optoelectronic devices.