Jiufengshan Laboratory: First release of 6-inch InP laser and detector epitaxial process.

On August 19, according to the news from JiuFengShan Laboratory, a recent important technological breakthrough has been achieved in the field of indium phosphide materials. JiuFengShan Laboratory has successfully developed the epitaxial growth process for 6-inch indium phosphide-based PIN structure detectors and FP structure lasers, with key performance indicators reaching the international leading level. This achievement is also the first time in China to achieve domestic synergy applications from core equipment to key materials in the field of large-size indium phosphide material preparation.