Galaxy Microelectronics Co., Ltd. plans to invest 310 million yuan to build the first phase of the high-end integrated circuit discrete device industrialization base factory construction project.

Galaxy Microelectronics announced on the evening of July 11th that in order to improve the production and processing capabilities of the company's integrated circuit discrete devices, and to expand the production scale of integrated circuit discrete devices, the company plans to invest 310 million yuan of its own funds to implement the "High-end Integrated Circuit Discrete Device Industrialization Base Phase I Factory Construction Project".