The "quantum flash memory" technology invented in our country has successfully constructed a coplanar structure with a drain-source junction channel, reaching the theoretical limit.

In the early morning of July 17th Beijing time, the research team of Zhou Peng and Liu Chunsen from the Integrated Circuit and Micro-nano Electronic Innovation Institute of Fudan University National Key Laboratory of Integrated Chips and Systems published a groundbreaking achievement in the journal "Science". Their invented "quantum flash memory" technology successfully constructed the coplanar drain-channel-source "unity" structure, and for the first time observed the non-volatile storage behavior of single electrons at room temperature. This not only completely breaks the traditional belief that "single electron storage" cannot be achieved, but also paves the way for a new theoretical system of single-electron quantum storage, laying a key theoretical foundation for the AI era computing revolution. This research has increased the information density of charge storage to the theoretical limit, reaching "one electron one bit", and providing a new technological foundation for the development of high-density storage for artificial general intelligence applications. Currently, the team has systematically bridged the entire chain from basic materials, device innovation to high-end chip integration and application: "Dawn" achieves breakthrough in access speed, "Unity" solves density limits, and "Changyin" completes the prototype chip verification compatible with existing CMOS silicon technology.