The news said that Samsung has achieved a prototype of 900-layer V-NAND.

According to reports, Samsung Electronics has recently successfully used "unit multi-bonding" technology to perfectly bond two 450-layer unit wafers, achieving a 900-layer V-NAND integrated system. Samsung announced that it has verified the normal unit operation characteristics. Thanks to the new introduced word line and bit line structure design, Samsung has successfully reduced the power consumption and overall size of the chip while achieving ultra-high layer stacking.