HK Stock Market Move | SICC Co., Ltd. (02631) rose nearly 6% in the morning. AIDC efficiency improvement promotes the application of silicon carbide. The company is the first to launch a 12-inch silicon carbide substrate.

SICC Co., Ltd. (02631) rose nearly 6% in the morning, at the time of writing, it has risen by 5% to HK$60.9, with a trading volume of HK$53.134 million. Goldman Sachs released a research report stating that the demand for energy efficiency in AI data centers is continuously increasing, becoming the new core drive for the application of Silicon Carbide (SiC). It can be used in 800V high voltage direct current (HVDC), power supply units (PSU), baseband processing units (BBU), and advanced packaging fields, with advantages of higher energy conversion efficiency, better heat dissipation, higher power density, and smaller size, meeting the demand for GPU computing power improvement. In addition, the performance upgrade and weight reduction requirements in the field of AI glasses, as well as the stock demand for fast charging scenarios of electric vehicles, collectively constitute three major growth engines. Goldman Sachs believes that SICC Co., Ltd. is a global leader in the field of semi-insulating silicon carbide substrates, being the first to introduce 12-inch silicon carbide substrates, early deployment of liquid phase epitaxy (LPE) technology combined with vapor phase deposition, independent design of crystal growth furnaces, and continuous improvement of silicon carbide ingot thickness. The product quality advantage is significant, with higher yields when customers use its substrates to produce silicon carbide devices, supporting product premium; by swiftly reducing costs to offset the impact of declining substrate prices, actively lowering the price of 8-inch silicon carbide substrates to seize market share and ensure profitability.