Lates News

On August 5, Kioxia and SanDisk officially launched their latest BiCS10 3D QLC NAND flash memory chip at the Future of Memory and Storage Conference (FMS), claiming it to be the highest storage density 3D NAND product officially introduced globally to date. According to the introduction, this chip features a 332-layer stacked structure, achieving a storage density of 37 Gb/mm, coupled with a high-speed interface of up to 4800 MT/s and supporting the Single Command Address (SCA) feature, mainly targeting the high-capacity data center SSD market. Compared to the BiCS10 3D TLC NAND products previously released by the two companies, its storage density exceeds 29 Gb/mm, further enhancing the storage capacity density for data centers. Industry experts estimate that with similar chip dimensions and storage cell quantities, the capacity of this chip may reach approximately 1.33Tb, although the manufacturer has not yet disclosed specific capacity specifications. To meet the demand for high performance and low power consumption in data centers, Kioxia and SanDisk have also introduced low-power isolation low-tap termination (PI-LTT) technology, which improves high-speed signal integrity while reducing output drive power consumption. The two companies stated that based on the latest BiCS10 process technology, the next generation of QLC NAND not only achieves higher bit density but is also expected to lower manufacturing costs after scaling up production capacity, thereby supporting higher-capacity SSDs to enter the market at more competitive prices.