Samsung's HBM4E yield rate exceeds 70%, the development of the seventh generation AI memory enters a stable phase.

The Chief Technology Officer and Director of the Semiconductor Research Institute of Samsung Electronics announced at an internal management meeting on June 30 that the reliability test yield of HBM4E has increased to over 70%. The industry usually considers 80% or higher as the threshold for "mature yield" in process stability, while HBM4E is still in the reliability testing stage, with the level of over 70% seen as a sign that the development process has officially entered a stable range. At the same time, he also revealed at the meeting that the next generation 10-nanometer seventh-generation DRAM technology has gained a competitive advantage over competitors in terms of technology competitiveness, and plans to complete production readiness certification in November of this year.