SK Hynix's 375-layer 3D NAND will enter mass production within the year, overcoming the challenge of ultra-high layer stacking by introducing molybdenum materials.

On June 11th, SK Hynix has completed production verification of 375-layer 3D NAND flash memory, and is ready to transfer the technology to the existing production line of the Cheongju M15 factory, with mass production expected to begin within the year. In terms of technology, SK Hynix has replaced tungsten with molybdenum as the word line metal gate material in the 375-layer product. Molybdenum has lower resistance in the fine word line structure than tungsten, which can improve signal transmission speed and read-write erase performance, and does not require an additional barrier layer to be laid before deposition, helping to achieve higher density structures.