Armor Hero Project plans to mass produce the tenth generation BiCS 3D NAND flash memory in the year 2027.

According to reports, industry insiders pointed out that the Knight-X plan is expected to mass produce the tenth generation BiCS FLASH product in 2027, with more details on the investment expected to be clearer by 2026H2. This timing is later than the previously exposed mass production plan for 2026. In terms of technical specifications, BiCS10 adopts a 332-layer unit stack architecture, which is approximately 52% more than the current 218-layer BiCS8, with a density increase of up to 59%. In addition, it is in line with the Toggle DDR 6.0 interface standard, with its I/O transfer rate increasing from 3.6Gbps to 4.8Gbps compared to the previous generation. At the same time, input power consumption is reduced by 10% and output power consumption is reduced by 34%. In standard TLC mode, it can achieve a single 2Tb storage capacity.