Xidian team tackles the world's difficult problem of chip heat dissipation: the performance of gallium nitride RF chips has been improved by 30% to 40%.

According to the official website of Xidian University, a team led by academician Zhang Jincheng from the Department of Yao Yue has recently made a historic breakthrough in this core issue - they have transformed the "island-like" connections between materials into atomically flat "films", significantly improving the heat dissipation efficiency and overall performance of chips. This problem, which has not been completely solved since the related nucleation technology won the Nobel Prize in 2014, has become the biggest bottleneck restricting the increase in RF chip power. The breakthrough in technology directly translates into a remarkable improvement in device performance. Based on this innovative technology of aluminum nitride thin film, the research team has fabricated gallium nitride microwave power devices, achieving output power densities of 42 W/mm and 20 W/mm in the X and Ka bands respectively. This data has increased the performance record of similar international devices by 30% to 40%, marking the largest breakthrough in this field in nearly twenty years. This means that, with the chip area remaining the same, the detection distance can be significantly increased; for communication base stations, it can achieve longer signal coverage and lower energy consumption. The more profound impact is that it has reserved key core device capabilities for driving the development of future industries such as 5G/6G communication and satellite Internet.