Jingsheng Electromechanical's 12-inch single-piece silicon carbide epitaxial growth equipment was successfully delivered.

Recently, Jingcheng Machinery has made a major breakthrough in the field of silicon carbide core equipment. The 12-inch single-piece silicon carbide epitaxial growth equipment was successfully delivered to the world's leading SiC epitaxy chip producer, Hantian Tiancheng. The newly developed 12-inch single-piece SiC epitaxial equipment is compatible with 8 and 12-inch SiC epitaxy production. Its innovative vertical split air intake scheme achieves high-precision closed-loop control of wafer surface temperature, precise partition control of process gases, and the equipment is equipped with automated loading/unloading modules and one-key automatic PM assistance function, significantly improving particle control capability and maintenance efficiency.