HK Stock Market Move | SICC Co., Ltd. (02631) rises more than 8%. The company's 8-inch products lead the market share in the industry. SiC continues to benefit from the iterative data center power solutions.

SICC Co., Ltd. (02631) rose more than 8%, up 7.38% at the time of publication, to HK$82 with a trading volume of HK$107 million. On the news front, according to TrendForce predictions, the shipment share of 8-inch SiC substrates is expected to exceed 20% by 2030. Northeast pointed out that SICC Co., Ltd. is gradually moving from being an "important domestic participant" to a "global leading competitor". According to the company's official website, by 2025, the company's market share in silicon carbide substrates and 8-inch products ranks first globally. The silicon carbide substrate industry is a typical high-barrier material race track, with a global competitive landscape showing the characteristics of "international concentration at the top, local manufacturers catching up, and accelerated structural differentiation". A Zhongjin research report pointed out that high-voltage architecture is the confirmed direction of development for data center power systems after AI computing power trends towards high density, continuous overload, and strong transient impacts. With hardware technology advancements, 2026 is expected to be the breakthrough year for high-voltage architecture in data centers. The report believes that core third-generation compound semiconductor devices such as SiC/GaN are expected to continue benefiting from upgrades to data center power systems. SiC is expected to dominate the gray area of the data center, while GaN is expected to penetrate on a large scale within the white area of the cabinet, forming a market pattern of "SiC on the left, GaN on the right", benefiting jointly from the iteration of data center power solutions.