TIANYU SEMI (02658) and QINGHE JINGYUAN signed a strategic cooperation agreement to jointly carry out process development and technology iteration of key bonding materials.

TIANYU SEMI (02658) announced that on January 16, 2026 (after trading hours), the company and Qinghe Jingyuan Semiconductor Technology (Group) Co., Ltd. (Qinghe Jingyuan) entered into a strategic cooperation agreement. Under this agreement, the contracting parties agreed to establish strategic cooperation, leveraging the company's advantages in the field of silicon carbide materials and Qinghe Jingyuan's capabilities in customizing and optimizing bonding equipment, to jointly carry out process development and technological iteration of bonding materials (including bonding silicon carbide (SiC), silicon on insulator (SOI), piezoelectric substrates on insulators (POI) and large-size (12 inches and above) SiC composite heat dissipation substrates). The board believes that the contracting parties will leverage their respective competitive advantages to establish a mutually beneficial partnership. By combining the company's industry strength in SiC epitaxial wafers with Qinghe Jingyuan's expertise in bonding integration technology and equipment, the collaboration aims to promote the development of advanced bonding material solutions and optimize production processes. It is expected that this cooperation will enhance the Group's technology capabilities in large-size composite substrates, ensure equipment stability, and further consolidate the Group's market position.